Avalanche Rugged Technology

An avalanche rugged fet don t snap back so for vds above their avalanche rating it acts a bit like a tvs diode.

Avalanche rugged technology. Superior avalanche rugged technology. Avalanche rugged technology 100 avalanche tested repetitive avalanche data at 100oc 3 3 low gate charge 2 2 1 1 logic level compatible input o 175 c operating temperature app. November 2001 irf654b irfs654b 250v n channel mosfet general description features these n channel enhancement mode power field effect 21a 250v rds on 0 14ω vgs 10 v transistors are produced using fairchild s proprietary low gate charge typical 95 nc planar dmos technology. Advanced power mosfetthermal resistancejunction to case datasheet search datasheets datasheet search site for electronic components and semiconductors integrated circuits diodes and other.

Superior avalanche rugged technology. Superior avalanche rugged technology. Superior avalanche rugged technology. Superior avalanche rugged technology.

Silicon schottky barrier diode for rectifying. Stp21n06l stp21n06lfi n channel enhancement mode low threshold power mos transistor type v r i dss ds on d stp21n06l. Superior avalanche rugged technology. The extreme ruggedness is demonstrated by guaranteeing the devices survive repetitive avalanche conditions under most circuit conditions provided t j max is not exceeded.

Semihow rev a0 december 2014electrical characteristics tj 25 c unless otherwise specifiedsymbolparametertest conditionsmintypmaxunits datasheet search datasheets datasheet search site for electronic components and semiconductors integrated circuits diodes and other semiconductors. Avalanche rugged technologyrugged gate oxide technologylower input capacitanceimproved gate chargeextended safe operating arealower leakage current. Superior avalanche rugged technology. Bvdss 650 vrds on typ 0 32id 11 aoriginative new designsuperior avalanche rugged technologyrobust gate oxide technologyvery low intrinsic capacitances datasheet search datasheets datasheet search site for electronic components and semiconductors integrated circuits diodes and other semiconductors.

The technology maintains ultra low r ds on and is qualified to the q101 quality standard. This is achieved physically by altering the doping profile of the backgate or adding an auxiliary drain body diffusion that is designed to run substantial current without thermal hot spotting issues and without activating any. 10 a max vds 200vlower rds on.